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제품소개
WLCSP
MEMS Sensor
Foundry Service
 
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Module Key Process Specification
Bonding
Adhesive Bonding
Eutectic Bonding
Direct Bonding
SOI Wafer Bonding
• Temperature : 90 ℃
• Contact Force : 2400 N
• Align Accuracy : 10 ㎛
• Bonding Material : Au-Si
• Temperature : 380~420 ℃
• Contact Force : 10~15 KN
• Align Accuracy : 15 ㎛
• Bonding Material : Si-SiO2/SiO2-SiO2
• Annealing condition : 1100 ℃,4h
• Align Accuracy : 10 ㎛
• Surface Energy : 2.3~3 J/m2
• Bonding Material : Si-SiO2
• Annealing condition : 1100 ℃,2h
• Align Accuracy : 10 ㎛
Etch
DRIE
Si Wet
Release Etch
• Etch Rate : 1.98㎛ /min
• Profile Angle : 90.1˚
• Etch Uniformity : 3.1%
• Aspect Ratio : 1:50
• 7um SOI Wafer TTV : 1.2㎛
• Membrane Thickness : 2.5㎛,
• Membrane TTV : 1.4㎛ (3±1㎛)
• Error rate of Stiction : 2.38%
• AOI Inspection Yield : 91.3%
Thin Film
Low Temp
PETEOS
Low Temp PEOxide
Low Temp PENitride
• Uniformity : 2%
• Step Coverage : 25%
• Stress : ±200MPa
• Processing temperature : 150℃
• Uniformity :2%
• Step Coverage : 10%
• Stress : ±200MPa
• Processing temperature : 150℃
• Uniformity :2%
• Step Coverage: 15%
• Deposition rate : 160.2 Å/sec
• Processing temperature : 250℃
EP
Cu, Ni, Au
Electroplating
• Plating Uniformity : ± 10%
• Via Aspect Ratio : 5:1
• Plating Material : Cu, Ni, Au
Backend
Grinding
Polishing
• TTV : Less than 3㎛
• Finish THK. : Min. 350㎛