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> Technology > GMEMS Technology Status
Adhesive Bonding
Eutectic
bonding
Direct
bonding
SOI Wafer bonding
• Bonding Vector : Si-SiO2/SiO2-SiO2
• Align Accuracy : <10㎛
• Surface Energy : 2.3~3 J/m2
• Bonding Vector : Au-Si
• Contact Force : 10~15 KN
• Align Accuracy : 15㎛
• Surface Energy : 1~2 J/m2
• Bonding Vector : Si-SiO2/SiO2-SiO2
• Align Accuracy : <10㎛
• Surface Energy : 2.3~3 J/m2
• Bonding Vector : Si-SiO2
• Align Accuracy : <10㎛
High Aspect Ratio
Si Etch
• Etch Rate : 1.98㎛/min
• Profile Angle : 90.1°
• Etch Uniformity : 3.1%
• Aspect Ratio : 1: 50
TSV(Through Si Via)
Formation Technology
• Etch Rate : 2.6㎛/min
• Profile Angle : 90.4°
• Etch Uniformity : 5%
• Aspect Ratio : 1:2
Notch Free DRIE
Si Etch
(TSV(Through Si Via))
• Profile Angle : 90°
• Side Wall Under Cut : Notch Free(0)
Poly-Si Tapered
Slop Etch Process
• Etch Uniformity : 2.2%
• Etch Rate : 2,814Å/min
• PR Selectivity : 1.1:1
• Poly Profile Angle :22.4°
(Normal Process : 80~90°)
Mo Tapered Slop
Etch Process
• Etch Uniformity : 5.0%
• Etch Rate : 1,850Å/min
• PR Selectivity : 0.25:1
• AlN Selectivity : 0.91:1
• Mo Profile Angle : average 10.44°
(Normal Process : 60~80°)
Piezoelectric layer(AlN)
Formation Technology
• FWHM(˚) : 1.51˚
• Wafer uniformity : 1.46%
• Wafer to Wafer Uniformity : 0.63<1δ
• Thickness : 1㎛
AIN
Thicknes
FWHM
(degree)
0.8㎛ 1.78
1.0㎛ 1.51
1.3㎛ 1.33
2.0㎛ 1.22
Membrane Electrode(Mo)
Formation Technology
• FWHM(˚) : 1.64 ˚
• Wafer uniformity : 0.95%
• Wafer to Wafer Uniformity : 1.19%
• Thickness : 0.4㎛
Mo
Thickness
FWHM
(degree)
0.15㎛ 2.32
0.3㎛ 1.9
0.4㎛ 1.64
0.5㎛ 1.52
Diaphragm Process
Development Using Si Wet Etch
(KOH/TMAH Wet Etch)
• 7um SOI Wafer TTV : 1.2㎛
• Thickness of diagram :
average : 2.5㎛,
TTV : 1.4㎛ (3±1㎛)

Structure Release Wet
Etch Process
(TMAH Wet Etch/HF/CPD)

• Error rate of Stiction : 2.38%
• AOI Inspection Yield : 91.3%
Low Temp. PE-TEOS deposition
Low Temp. PE-Oxide deposition
Low Temp. PE-Nitride deposition
• Uniformity : 2%
• Deposition rate : 61.01 Å/sec
• Etch Rate(HF 100:1) : 317.4 Å/min
• Step coverage(Width 50㎛/Depth 100㎛) : 25%
• Stress : ±200MPa
• Processing temperature : 150℃
• Uniformity : 2%
• Deposition rate : 140.35 Å/sec
• Etch Rate(HF 100:1) :1342 Å/min
• Step coverage(Width 50㎛/Depth 100㎛) : 10%
• Stress : ±200MPa
• Processing temperature : 150℃
• Uniformity : 2%
• Deposition rate : 160.2 Å/sec
• Etch Rate(HF 100:1) : 225.7 Å/min
• Step coverage(Width 50㎛/Depth 100㎛) : 15%
• Processing temperature : 250℃
Plating Process • Plating Uniformity : ± 10%
• Via Aspect Ratio : 5:1
• Plating Material : Cu, Ni, Au
Grinding & Polishing
Process
• Wafer Size : for both 6, and 8 inch
• TTV : Less than 3㎛ (Tape unapplied)
• Finish THK. : Min. 350㎛
• Product application : Si Wafer All Product
Wafer Sawing Process • Wafer Size : for both 6, and 8inch
• Kerf. : Si → 60㎛ , Glass → 80㎛
• Product application : Si and Glass
Wafer All Product
Solder ball Bumping
& Reflow Process
• Processing : Solder ball mount
• Wafer Size : 8inch
• Ball application: more than 200㎛
• Product application: Acceleration Sensor ,
WLCSP, Si Wafer
• Processing : Reflow
• Max Temp : 300℃
• Max Speed : 120cm/min